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* [MTD] [OneNAND] proper onenand_bbt_read_oob() prototypeAdrian Bunk2008-04-221-0/+3
| | | | | | | | This patch adds a proper prototype for onenand_bbt_read_oob() in include/linux/mtd/onenand.h Signed-off-by: Adrian Bunk <bunk@kernel.org> Signed-off-by: David Woodhouse <dwmw2@infradead.org>
* [MTD] [OneNAND] 2X program supportKyungmin Park2007-06-301-0/+12
| | | | | | | | | | | | | | | | | | | The 2X Program is an extension of Program Operation. Since the device is equipped with two DataRAMs, and two-plane NAND Flash memory array, these two component enables simultaneous program of 4KiB. Plane1 has only even blocks such as block0, block2, block4 while Plane2 has only odd blocks such as block1, block3, block5. So MTD regards it as 4KiB page size and 256KiB block size Now the following chips support it. (KFXXX16Q2M) Demux: KFG2G16Q2M, KFH4G16Q2M, KFW8G16Q2M, Mux: KFM2G16Q2M, KFN4G16Q2M, And more recent chips Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com> Signed-off-by: David Woodhouse <dwmw2@infradead.org>
* [MTD] [OneNAND] Classify the page data and oob bufferKyungmin Park2007-03-091-1/+4
| | | | | | | | Classify the page data and oob buffer and it prevents the memory fragementation (writesize + oobsize) Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com> Signed-off-by: David Woodhouse <dwmw2@infradead.org>
* [MTD] OneNAND: Reduce internal BufferRAM operationsKyungmin Park2007-02-021-6/+2
| | | | | | | | | | It use blockpage instead of a pair (block, page). It can also cover a small chunk access. 0x00, 0x20, 0x40 and so on. And in JFFS2 behavior, sometimes it reads two pages alternatively. e.g., It first reads A page, B page and A page. So we check another bufferram to find requested page. Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
* [MTD] OneNAND: Remove unused fieldsKyungmin Park2007-01-311-2/+0
| | | | | | | - Remove unused fields - Fix typo Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
* [MTD] OneNAND: Update copyrights and code cleanupKyungmin Park2007-01-181-1/+1
| | | | | | Update copyrights and code cleanup Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
* [MTD] OneNAND: Reduce Double Density Package (DDP) operationsKyungmin Park2007-01-181-0/+3
| | | | | | | - DDP code clean-up - Reduce block & bufferram operations in DDP Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
* [MTD] OneNAND: Implement read-while-loadAdrian Hunter2007-01-101-0/+1
| | | | | | | Read-while-load enables higher performance read operations. Signed-off-by: Adrian Hunter <ext-adrian.hunter@nokia.com> Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
* [MTD] OneNAND: add subpage write supportKyungmin Park2007-01-101-0/+2
| | | | | | OneNAND supports up to 4 writes at one NAND page. Add support of this feature. Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
* [MTD] OneNAND: lock supportKyungmin Park2006-11-161-1/+0
| | | | | | | | Now you can use mtd lock inferface on OneNAND The idea is from Nemakal, Vijaya, thanks Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
* MTD: OneNAND: interrupt based wait supportKyungmin Park2006-11-161-0/+4
| | | | | | | | | | | We can use the two methods to wait. 1. polling: read interrupt status register 2. interrupt: use kernel ineterrupt mechanism To use interrupt method, you first connect onenand interrupt pin to your platform and configure interrupt properly Signed-off-by: Kyungmin Park <kyungmin.park at samsung.com>
* [MTD ONENAND] Check OneNAND lock scheme & all block unlock command supportKyungmin Park2006-09-261-2/+4
| | | | | | | | OneNAND lock scheme depends on density and process of chip. Some OneNAND chips support all block unlock Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com> Signed-off-by: David Woodhouse <dwmw2@infradead.org>
* MTD: kernel-doc fixes + additionsRandy Dunlap2006-06-291-33/+44
| | | | | | | | | Fix some kernel-doc typos/spellos. Use kernel-doc syntax in places where it was almost used. Correct/add struct, struct field, and function param names where needed. Signed-off-by: Randy Dunlap <rdunlap@xenotime.net> Signed-off-by: David Woodhouse <dwmw2@infradead.org>
* [MTD] NAND Replace oobinfo by ecclayoutThomas Gleixner2006-05-291-3/+3
| | | | | | | | | The nand_oobinfo structure is not fitting the newer error correction demands anymore. Replace it by struct nand_ecclayout and fixup the users all over the place. Keep the nand_oobinfo based ioctl for user space compability reasons. Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
* OneNAND: One-Time Programmable (OTP) supportKyungmin Park2006-05-121-0/+2
| | | | | | | | | | | | | | One Block of the NAND Flash Array memory is reserved as a One-Time Programmable Block memory area. Also, 1st Block of NAND Flash Array can be used as OTP. The OTP block can be read, programmed and locked using the same operations as any other NAND Flash Array memory block. OTP block cannot be erased. OTP block is fully-guaranteed to be a valid block. Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
* OneNAND: handle byte access on BufferRAMKyungmin Park2006-05-121-0/+3
| | | | Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
* [PATCH] mtd onenand driver: reduce stack usageKyungmin Park2005-12-181-2/+2
| | | | Signed-off-by: Linus Torvalds <torvalds@osdl.org>
* [PATCH] mtd onenand driver: check correct manufacturerKyungmin Park2005-12-181-1/+0
| | | | | | | This (and the three subsequent patches) is working well on OMAP H4 with 2.6.15-rc4 kernel and passes the LTP fs test. Signed-off-by: Linus Torvalds <torvalds@osdl.org>
* [MTD] includes: Clean up trailing white spacesThomas Gleixner2005-11-071-1/+1
| | | | Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
* [MTD] OneNAND: Enhanced support for DDP (Dual Densitiy Packages)Kyungmin Park2005-11-061-0/+1
| | | | | | | Add density mask for better support of DDP chips. Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com> Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
* [MTD] OneNAND: Power Management (PM) supportKyungmin Park2005-11-061-0/+1
| | | | | | | Add suspend/resume Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com> Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
* [PATCH] OneNAND: Fix bug in write verifyKyungmin Park2005-11-061-0/+1
| | | | | | | | - Remove unused block, page parameters - Add constant instead of runtime value Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com> Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
* [PATCH] OneNAND: Update OMAP OneNAND mapping using device driver modelKyungmin Park2005-11-061-0/+8
| | | | | | | | - Update OMAP OneNAND mapping file using device driver model - Remove board specific macro and values. Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com> Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
* [PATCH] OneNAND: Simple Bad Block handling supportKyungmin Park2005-11-061-0/+9
| | | | | | | Based on NAND memory bad block table code Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com> Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
* [PATCH] OneNAND: Sync. Burst Read supportKyungmin Park2005-11-061-0/+1
| | | | | | | | Add OneNAND Sync. Burst Read support Tested with OMAP platform Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com> Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
* [MTD] Add initial support for OneNAND flash chipsKyungmin Park2005-11-061-0/+134
OneNAND is a new flash technology from Samsung with integrated SRAM buffers and logic interface. Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com> Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
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