pinctrl: exynos: Use one IRQ domain per pin bank

Instead of registering one IRQ domain for all pin banks of a pin
controller, this patch implements registration of per-bank domains.

At a cost of a little memory overhead (~2.5KiB for all GPIO interrupts
of Exynos4x12) it simplifies driver code and device tree sources,
because GPIO interrupts can be now specified per banks.

Example:
	device {
		/* ... */
		interrupt-parent = <&gpa1>;
		interrupts = <3 0>;
		/* ... */
	};

Signed-off-by: Tomasz Figa <t.figa@samsung.com>
Reviewed-by: Kyungmin Park <kyungmin.park@samsung.com>
Acked-by: Thomas Abraham <thomas.abraham@linaro.org>
Signed-off-by: Linus Walleij <linus.walleij@linaro.org>

1 files changed, 0 insertions, 12 deletions

diff --git a/drivers/pinctrl/pinctrl-exynos.h b/drivers/pinctrl/pinctrl-exynos.h
index 5d8e380..f05efa0 100644
--- a/drivers/pinctrl/pinctrl-exynos.h
+++ b/drivers/pinctrl/pinctrl-exynos.h
@@ -74,18 +74,6 @@
 	}
 
 /**
- * struct exynos_geint_data: gpio eint specific data for irq_chip callbacks.
- * @bank: pin bank from which this gpio interrupt originates.
- * @pin: pin number within the bank.
- * @eint_offset: offset to be added to the con/pend/mask register bank base.
- */
-struct exynos_geint_data {
-	struct samsung_pin_bank	*bank;
-	u32			pin;
-	u32			eint_offset;
-};
-
-/**
  * struct exynos_weint_data: irq specific data for all the wakeup interrupts
  * generated by the external wakeup interrupt controller.
  * @domain: irq domain representing the external wakeup interrupts