From c7ea4ae02c69fdc4837511582f654255e10fba4a Mon Sep 17 00:00:00 2001 From: Carl-Daniel Hailfinger Date: Mon, 16 Jun 2014 22:36:17 +0000 Subject: EEPROM support: handle implicit erase Add support for EEPROMs with 1 byte granularity and implicit erase on write. flashrom will not try to erase before write on these chips. Explicitly requested erase with -E is done by writing 0xff. Corresponding to flashrom svn r1822. Signed-off-by: Carl-Daniel Hailfinger Acked-by: Stefan Tauner --- flash.h | 1 + flashrom.c | 5 +++++ 2 files changed, 6 insertions(+) diff --git a/flash.h b/flash.h index cb53ad1..c2de2d0 100644 --- a/flash.h +++ b/flash.h @@ -87,6 +87,7 @@ enum write_granularity { write_gran_528bytes, /* If less than 528 bytes are written, the unwritten bytes are undefined. */ write_gran_1024bytes, /* If less than 1024 bytes are written, the unwritten bytes are undefined. */ write_gran_1056bytes, /* If less than 1056 bytes are written, the unwritten bytes are undefined. */ + write_gran_1byte_implicit_erase, /* EEPROMs and other chips with implicit erase and 1-byte writes. */ }; /* diff --git a/flashrom.c b/flashrom.c index 8e5d363..408c555 100644 --- a/flashrom.c +++ b/flashrom.c @@ -766,6 +766,10 @@ int need_erase(const uint8_t *have, const uint8_t *want, unsigned int len, enum case write_gran_1056bytes: result = need_erase_gran_bytes(have, want, len, 1056); break; + case write_gran_1byte_implicit_erase: + /* Do not erase, handle content changes from anything->0xff by writing 0xff. */ + result = 0; + break; default: msg_cerr("%s: Unsupported granularity! Please report a bug at " "flashrom@flashrom.org\n", __func__); @@ -807,6 +811,7 @@ static unsigned int get_next_write(const uint8_t *have, const uint8_t *want, uns switch (gran) { case write_gran_1bit: case write_gran_1byte: + case write_gran_1byte_implicit_erase: stride = 1; break; case write_gran_256bytes: -- cgit v1.1